Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework Medina Bailón, Cristina Dutta, Tapas Rezaei, Ali Nagy, Daniel Adamu-Lema, Fikru Georgiev, Vihar Asenov, Asen Integrated simulation environment Drift-Diffusion Quantum correction Kubo-Greenwood Non-equilibrium Green’s function Nanowire transistors (NWT) Tunnel FETs (TFET) Negative Capacitance FETs (NCFET) Resonant tunneling diodes (RTD) The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called NanoElectronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a driftdiffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices. 2021-07-06T08:39:55Z 2021-07-06T08:39:55Z 2021 info:eu-repo/semantics/article Medina-Bailon, C.; Dutta, T.; Rezaei, A.; Nagy, D.; Adamu-Lema, F.; Gergiev, V.P.; Asenov, A. Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. Micromachines 2021, 12, 680. https:// doi.org/10.3390/mi12060680 http://hdl.handle.net/10481/69542 10.3390/mi12060680 eng eu-repo/grantAgreement/EC/H2020/688101 SUPERAID7 http://creativecommons.org/licenses/by/3.0/es/ info:eu-repo/semantics/openAccess Atribución 3.0 España MDPI