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Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework
dc.contributor.author | Medina Bailón, Cristina | |
dc.contributor.author | Dutta, Tapas | |
dc.contributor.author | Rezaei, Ali | |
dc.contributor.author | Nagy, Daniel | |
dc.contributor.author | Adamu-Lema, Fikru | |
dc.contributor.author | Georgiev, Vihar | |
dc.contributor.author | Asenov, Asen | |
dc.date.accessioned | 2021-07-06T08:39:55Z | |
dc.date.available | 2021-07-06T08:39:55Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Medina-Bailon, C.; Dutta, T.; Rezaei, A.; Nagy, D.; Adamu-Lema, F.; Gergiev, V.P.; Asenov, A. Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. Micromachines 2021, 12, 680. https:// doi.org/10.3390/mi12060680 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/69542 | |
dc.description.abstract | The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called NanoElectronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a driftdiffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices. | es_ES |
dc.description.sponsorship | European Union Horizon 2020 - 688101 SUPERAID7 | es_ES |
dc.description.sponsorship | EPSRC UKRI Innovation Fellowship - EP/S001131/1 (QSEE), No. EP/P009972/1 (QUANTDEVMOD) | es_ES |
dc.description.sponsorship | H2020-FETOPEN-2019 s- No.862539-Electromed-FET OPEN. | es_ES |
dc.description.sponsorship | No. EP/S000259/1(Variability PDK for design based research on FPGA/neuro computing) | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | MDPI | es_ES |
dc.rights | Atribución 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/es/ | * |
dc.subject | Integrated simulation environment | es_ES |
dc.subject | Drift-Diffusion | es_ES |
dc.subject | Quantum correction | es_ES |
dc.subject | Kubo-Greenwood | es_ES |
dc.subject | Non-equilibrium Green’s function | es_ES |
dc.subject | Nanowire transistors (NWT) | es_ES |
dc.subject | Tunnel FETs (TFET) | es_ES |
dc.subject | Negative Capacitance FETs (NCFET) | es_ES |
dc.subject | Resonant tunneling diodes (RTD) | es_ES |
dc.title | Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework | es_ES |
dc.type | journal article | es_ES |
dc.relation.projectID | eu-repo/grantAgreement/EC/H2020/688101 SUPERAID7 | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.3390/mi12060680 |