@misc{10481/69542,
year = {2021},
url = {http://hdl.handle.net/10481/69542},
abstract = {The modeling of nano-electronic devices is a cost-effective approach for optimizing the
semiconductor device performance and for guiding the fabrication technology. In this paper, we
present the capabilities of the new flexible multi-scale nano TCAD simulation software called NanoElectronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in
such ultra-scaled devices with complex architectures and design, we have developed numerous
simulation modules based on various simulation approaches. Currently, NESS contains a driftdiffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules
are numerical solvers which are implemented in the C++ programming language, and all of them
are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of
those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor
devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and
future technologies where quantum mechanical effects play an important role. Our examples include
ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which
can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.},
organization = {European Union Horizon 2020 - 688101 SUPERAID7},
organization = {EPSRC UKRI Innovation Fellowship - EP/S001131/1 (QSEE), No.
EP/P009972/1 (QUANTDEVMOD)},
organization = {H2020-FETOPEN-2019 s- 
No.862539-Electromed-FET OPEN.},
organization = {No. EP/S000259/1(Variability PDK for design based research on FPGA/neuro computing)},
publisher = {MDPI},
keywords = {Integrated simulation environment},
keywords = {Drift-Diffusion},
keywords = {Quantum correction},
keywords = {Kubo-Greenwood},
keywords = {Non-equilibrium Green’s function},
keywords = {Nanowire transistors (NWT)},
keywords = {Tunnel FETs (TFET)},
keywords = {Negative Capacitance FETs (NCFET)},
keywords = {Resonant tunneling diodes (RTD)},
title = {Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework},
doi = {10.3390/mi12060680},
author = {Medina Bailón, Cristina and Dutta, Tapas and Rezaei, Ali and Nagy, Daniel and Adamu-Lema, Fikru and Georgiev, Vihar and Asenov, Asen},
}