Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo
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AuthorMedina Bailón, Cristina; Padilla, José Luis; Sampedro Matarín, Carlos; Godoy Medina, Andrés; Donetti, Luca; Gámiz Pérez, Francisco Jesús
Institute of Electrical and Electronics Engineers (IEEE)
direct Source-to-Drain tunnelingMulti-Subband Ensemble Monte CarloFDSOIDGSOIFinFET
C. Medina-Bailon, J. L. Padilla, C. Sampedro, A. Godoy, L. Donetti and F. Gámiz, "Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo," in IEEE Transactions on Electron Devices, vol. 65, no. 11, pp. 4740-4746, Nov. 2018, doi: 10.1109/TED.2018.2867721.
The inclusion of quantum effects in the transport direction plays an important role in the extensive research of ultrascaled electronic devices. In this context, it is necessary to study how these phenomena affect different technological architectures in order to conclude which one can be the best candidate to replace standard technology. This work presents the implementation of direct Source-to-Drain Tunneling effect (S/D tunneling) in a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator showing its influence in different structures such as FDSOI, DGSOI and FinFET devices. The differences in the potential profile and the electron distribution in the subbands for these architectures modify the number of electrons affected by this quantum mechanism and, therefore, their short channel behavior.