Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo Medina Bailón, Cristina Padilla De la Torre, José Luis Sampedro Matarín, Carlos Godoy Medina, Andrés Donetti, Luca Gámiz Pérez, Francisco Jesús direct Source-to-Drain tunneling Multi-Subband Ensemble Monte Carlo FDSOI DGSOI FinFET The inclusion of quantum effects in the transport direction plays an important role in the extensive research of ultrascaled electronic devices. In this context, it is necessary to study how these phenomena affect different technological architectures in order to conclude which one can be the best candidate to replace standard technology. This work presents the implementation of direct Source-to-Drain Tunneling effect (S/D tunneling) in a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator showing its influence in different structures such as FDSOI, DGSOI and FinFET devices. The differences in the potential profile and the electron distribution in the subbands for these architectures modify the number of electrons affected by this quantum mechanism and, therefore, their short channel behavior. 2021-06-30T09:51:27Z 2021-06-30T09:51:27Z 2018-09 journal article C. Medina-Bailon, J. L. Padilla, C. Sampedro, A. Godoy, L. Donetti and F. Gámiz, "Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo," in IEEE Transactions on Electron Devices, vol. 65, no. 11, pp. 4740-4746, Nov. 2018, doi: 10.1109/TED.2018.2867721. http://hdl.handle.net/10481/69441 10.1109/TED.2018.2867721 eng Print ISSN;0018-9383 http://creativecommons.org/licenses/by-nc-nd/3.0/ open access Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License Institute of Electrical and Electronics Engineers (IEEE)