@misc{10481/69441,
year = {2018},
month = {9},
url = {http://hdl.handle.net/10481/69441},
abstract = {The inclusion of quantum effects in the transport direction plays an important role in the extensive research of ultrascaled electronic devices. In this context, it is necessary to study how these phenomena affect different technological architectures in order to conclude which one can be the best candidate to replace standard technology. This work presents the implementation of direct Source-to-Drain Tunneling effect (S/D tunneling) in a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator showing its influence in different structures such as FDSOI, DGSOI and FinFET devices. The differences in the potential profile and the electron distribution in the subbands for these architectures modify the number of electrons affected by this quantum mechanism and, therefore, their short channel behavior.},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
keywords = {direct Source-to-Drain tunneling},
keywords = {Multi-Subband Ensemble Monte Carlo},
keywords = {FDSOI},
keywords = {DGSOI},
keywords = {FinFET},
title = {Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo},
doi = {10.1109/TED.2018.2867721},
author = {Medina Bailón, Cristina and Padilla De la Torre, José Luis and Sampedro Matarín, Carlos and Godoy Medina, Andrés and Donetti, Luca and Gámiz Pérez, Francisco Jesús},
}