Low-Cost Soft Error Robust Hardened D-Latch for CMOS Technology Circuit
MetadataShow full item record
AuthorHatefinasab, Seyedehsomayeh; Rodríguez Santiago, Noel; García Ríos, Antonio; Castillo Morales, María Encarnación
Hardened D-latchComplementary Metal Oxide Semiconductor (CMOS) technologyPower-Delay Product (PDP)Soft Error (SE)SEU (Single Event Upset)High Impedance State (HIS)Single event transient (SET)
Hatefinasab, S.; Rodriguez, N.; García, A.; Castillo, E. Low-Cost Soft Error Robust Hardened D-Latch for CMOS Technology Circuit. Electronics 2021, 10, 1256. https:// doi.org/10.3390/electronics10111256
In this paper, a Soft Error Hardened D-latch with improved performance is proposed, also featuring Single Event Upset (SEU) and Single Event Transient (SET) immunity. This novel D-latch can tolerate particles as charge injection in different internal nodes, as well as the input and output nodes. The performance of the new circuit has been assessed through different key parameters, such as power consumption, delay, Power-Delay Product (PDP) at various frequencies, voltage, temperature, and process variations. A set of simulations has been set up to benchmark the new proposed D-latch in comparison to previous D-latches, such as the Static D-latch, TPDICE-based D-latch, LSEH-1 and DICE D-latches. A comparison between these simulations proves that the proposed D-latch not only has a better immunity, but also features lower power consumption, delay, PDP, and area footprint. Moreover, the impact of temperature and process variations, such as aspect ratio (W/L) and threshold voltage transistor variability, on the proposed D-latch with regard to previous D-latches is investigated. Specifically, the delay and PDP of the proposed D-latch improves by 60.3% and 3.67%, respectively, when compared to the reference Static D-latch. Furthermore, the standard deviation of the threshold voltage transistor variability impact on the delay improved by 3.2%, while its impact on the power consumption improves by 9.1%. Finally, it is shown that the standard deviation of the (W/L) transistor variability on the power consumption is improved by 56.2%.