Laser-Fabricated Reduced Graphene Oxide Memristors
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AuthorRomero Maldonado, Francisco Javier; Toral López, Alejandro; Ohata, Akiko; Morales Santos, Diego Pedro; García Ruiz, Francisco Javier; Godoy Medina, Andrés; Rodríguez Santiago, Noel
MemristorGraphene oxideLaser-scribingNeuromorphicFlexible Electronics
Romero, F.J.; Toral-Lopez, A.; Ohata, A.; Morales, D.P.; Ruiz, F.G.; Godoy, A.; Rodriguez, N. Laser-Fabricated Reduced Graphene Oxide Memristors. Nanomaterials 2019, 9, 897. [doi:10.3390/nano9060897]
SponsorshipThis work has been supported by the Spanish Ministry of Science, Innovation and Universities/FEDER-EU through the project TEC2017-89955-P, Iberdrola Foundation under its 2018 Research Grant Program, the pre-doctoral grants FPU16/01451, FPU16/04043, and the JSPS KAKENHI through grant number JP18k04275.
Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.