Laser-Fabricated Reduced Graphene Oxide Memristors Romero Maldonado, Francisco Javier Toral López, Alejandro Ohata, Akiko Morales Santos, Diego Pedro García Ruiz, Francisco Javier Godoy Medina, Andrés Rodríguez Santiago, Noel Memristor Graphene oxide Laser-scribing Neuromorphic Flexible Electronics Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications. 2020-05-07T09:57:08Z 2020-05-07T09:57:08Z 2019-06-19 info:eu-repo/semantics/article Romero, F.J.; Toral-Lopez, A.; Ohata, A.; Morales, D.P.; Ruiz, F.G.; Godoy, A.; Rodriguez, N. Laser-Fabricated Reduced Graphene Oxide Memristors. Nanomaterials 2019, 9, 897. [doi:10.3390/nano9060897] http://hdl.handle.net/10481/61865 10.3390/nano9060897 eng http://creativecommons.org/licenses/by/3.0/es/ info:eu-repo/semantics/openAccess Atribución 3.0 España MDPI