@misc{10481/61865,
year = {2019},
month = {6},
url = {http://hdl.handle.net/10481/61865},
abstract = {Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.},
organization = {This work has been supported by the Spanish Ministry of Science, Innovation and Universities/FEDER-EU through the project TEC2017-89955-P, Iberdrola Foundation under its 2018 Research Grant Program, the pre-doctoral grants FPU16/01451, FPU16/04043, and the JSPS KAKENHI through grant number JP18k04275.},
publisher = {MDPI},
keywords = {Memristor},
keywords = {Graphene oxide},
keywords = {Laser-scribing},
keywords = {Neuromorphic},
keywords = {Flexible Electronics},
title = {Laser-Fabricated Reduced Graphene Oxide Memristors},
doi = {10.3390/nano9060897},
author = {Romero Maldonado, Francisco Javier and Toral López, Alejandro and Ohata, Akiko and Morales Santos, Diego Pedro and García Ruiz, Francisco Javier and Godoy Medina, Andrés and Rodríguez Santiago, Noel},
}