Simulation of 2D semiconductor based MOSFETs
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A. Toral-Lopez et al. Simulation of 2D semiconductor based MOSFETs. 12th Spanish Conference on Electron Devices, Salamanca 2018
SponsorshipThe authors would like to thank the financial support of Spanish Government under projects TEC2014-59730-R and TEC2017-89955-P.
In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.