@misc{10481/58486,
year = {2018},
month = {11},
url = {http://hdl.handle.net/10481/58486},
abstract = {In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.},
organization = {The authors would like to thank the financial support of Spanish Government under projects TEC2014-59730-R and TEC2017-89955-P.},
title = {Simulation of 2D semiconductor based MOSFETs},
author = {Toral López, Alejandro and González-Medina, Jose María and González Marín, Enrique and Marin-Sanchez, Antonio and García Ruiz, Francisco Javier and Godoy Medina, Andrés},
}