Simulation of 2D semiconductor based MOSFETs

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URI: http://hdl.handle.net/10481/58486
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Auteur
Toral López, Alejandro; González-Medina, Jose María; González Marín, Enrique; Marin-Sanchez, Antonio; García Ruiz, Francisco Javier; Godoy Medina, Andrés
Date
2018-11-12
Referencia bibliográfica
A. Toral-Lopez et al. Simulation of 2D semiconductor based MOSFETs. 12th Spanish Conference on Electron Devices, Salamanca 2018
Patrocinador
The authors would like to thank the financial support of Spanish Government under projects TEC2014-59730-R and TEC2017-89955-P.
Résumé
In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
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