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dc.contributor.authorToral López, Alejandro 
dc.contributor.authorGonzález-Medina, Jose María
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorMarin-Sanchez, Antonio
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2020-01-07T10:45:59Z
dc.date.available2020-01-07T10:45:59Z
dc.date.issued2018-11-12
dc.identifier.citationA. Toral-Lopez et al. Simulation of 2D semiconductor based MOSFETs. 12th Spanish Conference on Electron Devices, Salamanca 2018es_ES
dc.identifier.urihttp://hdl.handle.net/10481/58486
dc.description.abstractIn this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.es_ES
dc.description.sponsorshipThe authors would like to thank the financial support of Spanish Government under projects TEC2014-59730-R and TEC2017-89955-P.es_ES
dc.language.isoenges_ES
dc.titleSimulation of 2D semiconductor based MOSFETses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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