Charge model of four-terminal 2D semiconductor FETs
Identificadores
URI: http://hdl.handle.net/10481/58483Metadatos
Afficher la notice complèteDate
2018-11-12Referencia bibliográfica
F. Pasadas et al. Charge model of four-terminal 2D semiconductor FETs. 12th Spanish Conference on Electron Devices, Salamanca 2018
Patrocinador
This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía y Competitividad under GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER).Résumé
A charge model for four-terminal two-dimensional (2D)
semiconductor based field-effect transistors (FETs) is
proposed. The model is suitable for describing the
dynamic response of these devices under time-varying
terminal voltage excitations.