TY  - GEN 
AU  - Pasadas, Francisco
AU  - Jimenez, David
AU  - González Marín, Enrique
AU  - García Ruiz, Francisco Javier
AU  - Godoy Medina, Andrés
PY  - 2018
UR  - http://hdl.handle.net/10481/58483
AB  - A charge model for four-terminal two-dimensional (2D)
semiconductor based field-effect transistors (FETs) is
proposed. The model is suitable for describing the
dynamic response of these devices under time-varying
terminal voltage excitations.
LA  - eng
TI  - Charge model of four-terminal 2D semiconductor FETs
ER  -