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Charge model of four-terminal 2D semiconductor FETs

dc.contributor.authorPasadas, Francisco
dc.contributor.authorJimenez, David
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2020-01-07T10:30:15Z
dc.date.available2020-01-07T10:30:15Z
dc.date.issued2018-11-12
dc.identifier.citationF. Pasadas et al. Charge model of four-terminal 2D semiconductor FETs. 12th Spanish Conference on Electron Devices, Salamanca 2018es_ES
dc.identifier.urihttp://hdl.handle.net/10481/58483
dc.description.abstractA charge model for four-terminal two-dimensional (2D) semiconductor based field-effect transistors (FETs) is proposed. The model is suitable for describing the dynamic response of these devices under time-varying terminal voltage excitations.es_ES
dc.description.sponsorshipThis work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía y Competitividad under GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER).es_ES
dc.language.isoenges_ES
dc.relationEC/H2020/785219es_ES
dc.titleCharge model of four-terminal 2D semiconductor FETses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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