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      <dc:title>Charge model of four-terminal 2D semiconductor FETs</dc:title>
      <dc:creator>Pasadas, Francisco</dc:creator>
      <dc:creator>Jimenez, David</dc:creator>
      <dc:creator>González Marín, Enrique</dc:creator>
      <dc:creator>García Ruiz, Francisco Javier</dc:creator>
      <dc:creator>Godoy Medina, Andrés</dc:creator>
      <dc:description>A charge model for four-terminal two-dimensional (2D)&#xd;
semiconductor based field-effect transistors (FETs) is&#xd;
proposed. The model is suitable for describing the&#xd;
dynamic response of these devices under time-varying&#xd;
terminal voltage excitations.</dc:description>
      <dc:date>2020-01-07T10:30:15Z</dc:date>
      <dc:date>2020-01-07T10:30:15Z</dc:date>
      <dc:date>2018-11-12</dc:date>
      <dc:type>info:eu-repo/semantics/conferenceObject</dc:type>
      <dc:identifier>F. Pasadas et al. Charge model of four-terminal 2D semiconductor FETs.  12th Spanish Conference on Electron Devices, Salamanca 2018</dc:identifier>
      <dc:identifier>http://hdl.handle.net/10481/58483</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:relation>EC/H2020/785219</dc:relation>
      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
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