Charge model of four-terminal 2D semiconductor FETs

Pasadas, Francisco; Jimenez, David; González Marín, Enrique; García Ruiz, Francisco Javier; Godoy Medina, Andrés

CDE2018_FranPasadas.pdf (402.3Kb)

Identificadores

URI: http://hdl.handle.net/10481/58483

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Fecha

2018-11-12

Referencia bibliográfica

F. Pasadas et al. Charge model of four-terminal 2D semiconductor FETs. 12th Spanish Conference on Electron Devices, Salamanca 2018

Patrocinador

This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía y Competitividad under GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER).

Resumen

A charge model for four-terminal two-dimensional (2D) semiconductor based field-effect transistors (FETs) is proposed. The model is suitable for describing the dynamic response of these devices under time-varying terminal voltage excitations.