Numerical study of p-type InSb and GaSb nanowires
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C, Martinez-Blanque et al. Gate capacitance performance of p-type InSb and GaSb nanowires. 11th Spanish Conference on Electron Devices. Barcelona, 2017
SponsorshipThis work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873. A. Toral also acknowledges the University of Granada funding through the Becas de Iniciación a la Investigación para alumnus de Máster. J. M. González-Medina also acknowledges grant FPU014/02579.
III-V nanowires (NWs) have attracted extensive research interests in recent years because of their unique physical properties, being recognized as promising building blocks for the next generation of electronics and photonics. Most of the works up-to-date are, however, focused on n-type devices where materials such as InAs or InGaAs have already demonstrated impressive performance. Nevertheless, for the practical implementation of CMOS circuits based on NWs, p- channel FETs are mandatory. Several materials are currently being investigated as technologically relevant p-type semiconductors. In particular, increasingly more attention has been focused on InSb and GaSb NWs owing to their excellent hole transport properties. In this work we study the electrostatic properties of traditional p-type NWs based on Si and Ge compared to III-V materials.