Numerical study of p-type InSb and GaSb nanowires Martínez Blanque, Celso Jesús Toral López, Alejandro González-Medina, Jose María González Marín, Enrique García Ruiz, Francisco Javier Godoy Medina, Andrés Gámiz Pérez, Francisco Jesús III-V nanowires (NWs) have attracted extensive research interests in recent years because of their unique physical properties, being recognized as promising building blocks for the next generation of electronics and photonics. Most of the works up-to-date are, however, focused on n-type devices where materials such as InAs or InGaAs have already demonstrated impressive performance. Nevertheless, for the practical implementation of CMOS circuits based on NWs, p- channel FETs are mandatory. Several materials are currently being investigated as technologically relevant p-type semiconductors. In particular, increasingly more attention has been focused on InSb and GaSb NWs owing to their excellent hole transport properties. In this work we study the electrostatic properties of traditional p-type NWs based on Si and Ge compared to III-V materials. 2020-01-07T10:06:55Z 2020-01-07T10:06:55Z 2017-02-08 info:eu-repo/semantics/conferenceObject C, Martinez-Blanque et al. Gate capacitance performance of p-type InSb and GaSb nanowires. 11th Spanish Conference on Electron Devices. Barcelona, 2017 http://hdl.handle.net/10481/58475 eng info:eu-repo/semantics/openAccess