@misc{10481/58475,
year = {2017},
month = {2},
url = {http://hdl.handle.net/10481/58475},
abstract = {III-V nanowires (NWs) have attracted extensive
research interests in recent years because of their unique
physical properties, being recognized as promising
building blocks for the next generation of electronics
and photonics. Most of the works up-to-date are,
however, focused on n-type devices where materials
such as InAs or InGaAs have already demonstrated
impressive performance. Nevertheless, for the practical
implementation of CMOS circuits based on NWs, p-
channel FETs are mandatory. Several materials are
currently being investigated as technologically relevant
p-type semiconductors. In particular, increasingly more
attention has been focused on InSb and GaSb NWs
owing to their excellent hole transport properties. In this
work we study the electrostatic properties of traditional
p-type NWs based on Si and Ge compared to III-V
materials.},
organization = {This work was supported by the Spanish Government under 
the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873. A. Toral also acknowledges the University of Granada funding through the Becas de Iniciación a la Investigación para alumnus de Máster. J. M. González-Medina also acknowledges grant FPU014/02579.},
title = {Numerical study of p-type InSb and GaSb nanowires},
author = {Martínez Blanque, Celso Jesús and Toral López, Alejandro and González-Medina, Jose María and González Marín, Enrique and García Ruiz, Francisco Javier and Godoy Medina, Andrés and Gámiz Pérez, Francisco Jesús},
}