Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
Metadatos
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Navarro Moral, Santiago; Márquez González, Carlos; Lee, Kyunghwa; Navarro Moral, Carlos; Parihar, Mukta Singh; Park, Hyungjin; Galy, Philippe; Bawedin, Maryline; Kim, Yong Tae; Cristoloveanu, Sorin; Gámiz Pérez, Francisco Jesús; KimMateria
1T-DRAM Z2-FET Capacitorless Fully depleted (FD)
Fecha
2019-09Patrocinador
H2020 REMINDER European project (grant agreementNo 687931) and TEC2014-59730 are thanked for financialsupport.Resumen
Thin-oxide Z2-FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FD SOI technology. Nevertheless a performance drop and higher variability with respect to thicker oxide Z2-FET cells are observed.