Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells Navarro Moral, Santiago Márquez González, Carlos Lee, Kyunghwa Navarro Moral, Carlos Parihar, Mukta Singh Park, Hyungjin Galy, Philippe Bawedin, Maryline Kim, Yong Tae Cristoloveanu, Sorin Gámiz Pérez, Francisco Jesús Kim 1T-DRAM Z2-FET Capacitorless Fully depleted (FD) Thin-oxide Z2-FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FD SOI technology. Nevertheless a performance drop and higher variability with respect to thicker oxide Z2-FET cells are observed. 2019-10-21T09:40:40Z 2019-10-21T09:40:40Z 2019-09 journal article http://hdl.handle.net/10481/57452 10.1016/j.sse.2019.03.040 eng info:eu-repo/grantAgreement/EC/H2020/REMINDER 687931 Grant agreement No 687931 http://creativecommons.org/licenses/by-nc-nd/3.0/ embargoed access Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License