@misc{10481/57452,
year = {2019},
month = {9},
url = {http://hdl.handle.net/10481/57452},
abstract = {Thin-oxide Z2-FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FD SOI technology. Nevertheless a performance drop and higher variability with respect to thicker oxide Z2-FET cells are observed.},
organization = {H2020  REMINDER  European  project  (grant  agreementNo  687931)  and  TEC2014-59730  are  thanked  for  financialsupport.},
keywords = {1T-DRAM},
keywords = {Z2-FET},
keywords = {Capacitorless},
keywords = {Fully depleted (FD)},
title = {Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells},
doi = {10.1016/j.sse.2019.03.040},
author = {Navarro Moral, Santiago and Márquez González, Carlos and Lee, Kyunghwa and Navarro Moral, Carlos and Parihar, Mukta Singh and Park, Hyungjin and Galy, Philippe and Bawedin, Maryline and Kim, Yong Tae and Cristoloveanu, Sorin and Gámiz Pérez, Francisco Jesús and Kim},
}