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dc.contributor.advisorRoldán Aranda, Juan Bautista es_ES
dc.contributor.authorPérez Villada, Manuel
dc.contributor.otherUniversidad de Granada. Departamento de Electrónica y Tecnología de Computadoreses_ES
dc.date.accessioned2014-10-31T09:52:41Z
dc.date.available2014-10-31T09:52:41Z
dc.date.issued2014-10-31
dc.identifier.urihttp://hdl.handle.net/10481/33513
dc.description.abstractIn this work we introduce an analytical model for square Gate All Around (GAA) MOSFETs with rounded corners including quantum effects. With the model developed it is possible to provide an analytical description of the 2D inversion charge distribution function (ICDF) in devices of different sizes and for all the op erational regimes. The accuracy of the model is verified by comparing with data obtai ned by means of a 2D numerical simulator that self-consistently solves the Poi sson and Schr ̈odinger equations. The expressions presented here are useful to achieve a good d escription of the physics of these transistors; in particular, of the quantization effect s on the inversion charge. The analytical ICDF obtained is used to calculate important par ameters from the device compact modeling viewpoint, such as the inversion charge ce ntroid and the gate-to- channel capacitance, which are modeled for different device g eometries and biases.es_ES
dc.description.sponsorshipUniversidad de Granada. Departamento de Electrónica y Tecnología de los Computadores. Máster Métodos y Técnicas Avanzadas en Física (MTAF),es_ES
dc.language.isoenges_ES
dc.subjectGate all around (GAA)es_ES
dc.subjectInversion charge distribution function (ICDF)es_ES
dc.subjectMOSFETes_ES
dc.subjectMetal oxide semiconductor field-effect transistorses_ES
dc.titleAn analytical model for the inversion charge distribution in square GAA MOSFETs with rounded cornerses_ES
dc.typeinfo:eu-repo/semantics/masterThesises_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.30827/Digibug.33513


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