Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors
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AuthorGonzález-Medina, Jose María; Garcia Ruiz, Francisco Javier; Godoy Medina, Andrés; Gonzalez Marin, Enrique; Gamiz Perez, Francisco J.
10th Spanish Conference on Electron Devices [http://digibug.ugr.es/handle/10481/50960]
We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the effective mass approximation. Phonon-limited electron mobility is then calculated solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation for different device sizes and bias conditions.