@misc{10481/50960,
year = {2015},
month = {2},
url = {http://hdl.handle.net/10481/50960},
abstract = {We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the effective mass approximation. Phonon-limited electron mobility is then calculated solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation for different device sizes and bias conditions.},
publisher = {IEEE},
title = {Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors},
author = {González-Medina, Jose María and Garcia Ruiz, Francisco Javier and Godoy Medina, Andrés and González Marín, Enrique and Gámiz Pérez, Francisco Jesús},
}