TY  - GEN 
AU  - González-Medina, Jose María
AU  - Garcia Ruiz, Francisco Javier
AU  - Godoy Medina, Andrés
AU  - González Marín, Enrique
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2015
UR  - http://hdl.handle.net/10481/50960
AB  - We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the...
LA  - eng
PB  - IEEE
TI  - Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors
ER  -