Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors González-Medina, Jose María Garcia Ruiz, Francisco Javier Godoy Medina, Andrés González Marín, Enrique Gámiz Pérez, Francisco Jesús We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the effective mass approximation. Phonon-limited electron mobility is then calculated solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation for different device sizes and bias conditions. 2018-05-17T10:05:40Z 2018-05-17T10:05:40Z 2015-02-11 info:eu-repo/semantics/conferenceObject 10th Spanish Conference on Electron Devices [http://digibug.ugr.es/handle/10481/50960] http://hdl.handle.net/10481/50960 eng info:eu-repo/semantics/openAccess IEEE