Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs

Roldán Aranda, Juan Bautista; Gámiz Pérez, Francisco Jesús; López Villanueva, Juan Antonio

doi:10.1155/1998/52301

VLSI Design - 1998 - Roldán - Development of a Method for Determining the Dependence of the Electron Mobility on the.pdf (524.4Kb)

Identificadores

URI: https://hdl.handle.net/10481/98134

DOI: 10.1155/1998/52301

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Editorial

Wiley

Materia

Electron mobility

longitudinal-electric field

saturation velocity

Fecha

1998-01-01

Referencia bibliográfica

Roldán, J. B., Gámiz, F., López-Villanueva, J. A., Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs, VLSI Design, 8, 052301, 4 pages, 1998. https://doi.org/10.1155/1998/52301

Patrocinador

Project TIC 95-0511, supported by the Spanish Government (CICYT)

Resumen

A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

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