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dc.contributor.authorRoldán Aranda, Juan Bautista 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.contributor.authorLópez Villanueva, Juan Antonio 
dc.date.accessioned2024-12-17T11:30:11Z
dc.date.available2024-12-17T11:30:11Z
dc.date.issued1998-01-01
dc.identifier.citationRoldán, J. B., Gámiz, F., López-Villanueva, J. A., Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs, VLSI Design, 8, 052301, 4 pages, 1998. https://doi.org/10.1155/1998/52301es_ES
dc.identifier.urihttps://hdl.handle.net/10481/98134
dc.description.abstractA new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.es_ES
dc.description.sponsorshipProject TIC 95-0511, supported by the Spanish Government (CICYT)es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectElectron mobilityes_ES
dc.subjectlongitudinal-electric fieldes_ES
dc.subjectsaturation velocityes_ES
dc.titleDevelopment of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETses_ES
dc.typejournal articlees_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1155/1998/52301
dc.type.hasVersionVoRes_ES


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