Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs Roldán Aranda, Juan Bautista Gámiz Pérez, Francisco Jesús López Villanueva, Juan Antonio Electron mobility longitudinal-electric field saturation velocity A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method. 2024-12-17T11:30:11Z 2024-12-17T11:30:11Z 1998-01-01 journal article Roldán, J. B., Gámiz, F., López-Villanueva, J. A., Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs, VLSI Design, 8, 052301, 4 pages, 1998. https://doi.org/10.1155/1998/52301 https://hdl.handle.net/10481/98134 10.1155/1998/52301 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Wiley