A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Metadatos
Mostrar el registro completo del ítemAutor
Maldonado Correa, David; Aldana Delgado, Samuel; Cantudo Gómez, Antonio; Jiménez Molinos, Francisco; Roldán Aranda, Juan BautistaEditorial
Elsevier
Materia
Resistive switching RRAM Operation dynamics Characterization Kinetic Monte Carlo Compact modeling
Fecha
2023-10-18Referencia bibliográfica
D. Maldonado et al. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories. Materials Science in Semiconductor Processing 169 (2024) 107878[https://doi.org/10.1016/j.mssp.2023.107878]
Patrocinador
FEDER program [PID2022-139586NB-C41, PID2022- 139586NB-C42; PID2022-139586NB-C43; PID2022-139586NB-C44]; The Consejería de Conocimiento, Investigaci´on y Universidad; Junta de Andalucía (Spain) [B-TIC-624-UGR20]; Spanish Consejo Superior de Investigaciones Científicas (CSIC) [20225AT012]; FEDER funds; Ramón y Cajal grant number RYC2020-030150-I; European project MEMQuD, code 20FUN06; EMPIR programme co-financed by the Participating States; European Union’s Horizon 2020 research and innovation programmeResumen
The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The analysis consisted in
the systematic application of voltage sweeps with different ramp rates and temperatures. The obtained results
give clear insight into the role played by transient and thermal effects on the device operation. Both kinetic
Monte Carlo simulations and a compact modeling approach based on the Dynamic Memdiode Model are
considered in this work with the aim of assessing, in terms of their respective scopes, the nature of the physical
processes that characterize the formation and rupture of the filamentary conducting channel spanning the oxide
film. As a result of this study, a better understanding of the different facets of the resistive switching dynamics is
achieved. It is shown that the temperature and, mainly, the applied electric field, control the switching mechanism
of our devices. The Dynamic Memdiode Model, being a behavioral analytic approach, is shown to be
particularly suitable for reproducing the conduction characteristics of our devices using a single set of parameters
for the different operation regimes