Characterization and modeling of resistive memories based on mis and mim structures

Abstract

The efforts in this doctoral thesis have been focused on the characterization and modeling of memristive devices fabricated using different technologies. Among all the memristive devices, we will focus on resistive random access memories (RRAM), also known as resistive memories. To do so, devices based on metal-insulator-metal and metal-insulator-semiconductor structures have been studied in depth. A simulator based on circuit breakers has also been developed and tested to analyse RRAM variability and operation.