@misc{10481/75969,
year = {2022},
url = {http://hdl.handle.net/10481/75969},
abstract = {The efforts in this doctoral thesis have been focused on the characterization and modeling of
memristive devices fabricated using different technologies. Among all the memristive devices, we will
focus on resistive random access memories (RRAM), also known as resistive memories. To do so,
devices based on metal-insulator-metal and metal-insulator-semiconductor structures have been
studied in depth. A simulator based on circuit breakers has also been developed and tested to analyse
RRAM variability and operation.},
organization = {Tesis Univ. Granada.},
organization = {Ministerio de Economía y Competitividad de España FEDER TEC2014-52152-C3-2-R y TEC2017-84321-C4-3-R},
organization = {Junta de Andalucía FEDER A-TIC-117-UGR18 y B-TIC-624-UGR20},
publisher = {Universidad de Granada},
keywords = {Resistive memories},
title = {Characterization and modeling of resistive memories based on mis and mim structures},
author = {Maldonado Correa, David},
}