Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

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URI: http://hdl.handle.net/10481/72295
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Autor
Pérez Valero, Eduardo; Maldonado Correa, David; Acal González, Christian José; Ruiz Castro, Juan Eloy; Alonso Morales, Francisco J.; Aguilera Del Pino, Ana María; Jiménez Molinos, Francisco; Wenger, Christian; Roldán Aranda, Juan Bautista
Editorial
Elsevier
Materia
RRAM Array
 
Variability
 
Weibull distribution
 
Phase-type distribution
 
Fecha
2019-05-13
Referencia bibliográfica
E. Pérez, D. Maldonado, C. Acal, J.E. Ruiz-Castro, F.J. Alonso, A.M. Aguilera, F. Jiménez-Molinos, Ch. Wenger, J.B. Roldán, Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs, Microelectronic Engineering, Volume 214, 2019, Pages 104-109, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2019.05.004.
Patrocinador
Spanish Ministry of Science and the FEDER program (TEC2017-84321-C4-3-R and MTM2017-88708-P); German Research Foundation (DFG) (research group FOR2093)
Resumen
In order to study the device-to-device and cycle-to-cycle variability of switching voltages in 4-kbit RRAM arrays, an alternative statistical approach has been adopted by using experimental data collected from a batch of 128 devices switched along 200 cycles. The statistical distributions of switching voltages have been usually studied by using the Weibull distribution. However, this distribution does not work accurately on Al:HfO2-based RRAM devices. Therefore, an alternative approach based on phase-type distributions is proposed to model the forming, reset and set voltage distributions. Experimental results show that in general the phase-type analysis works better than the Weibull one.
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Atribución-SinDerivadas 3.0 España
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