@misc{10481/72295,
year = {2019},
month = {5},
url = {http://hdl.handle.net/10481/72295},
abstract = {In order to study the device-to-device and cycle-to-cycle variability of switching voltages in 4-kbit RRAM arrays, an alternative statistical approach has been adopted by using experimental data collected from a batch of 128 devices switched along 200 cycles. The statistical distributions of switching voltages have been usually studied by using the Weibull distribution. However, this distribution does not work accurately on Al:HfO2-based RRAM devices. Therefore, an alternative approach based on phase-type distributions is proposed to model the forming, reset and set voltage distributions. Experimental results show that in general the phase-type analysis works better than the Weibull one.},
organization = {Spanish Ministry of Science and the FEDER program (TEC2017-84321-C4-3-R and MTM2017-88708-P)},
organization = {German Research Foundation (DFG) (research group FOR2093)},
publisher = {Elsevier},
keywords = {RRAM Array},
keywords = {Variability},
keywords = {Weibull distribution},
keywords = {Phase-type distribution},
title = {Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs},
doi = {https://doi.org/10.1016/j.mee.2019.05.004},
author = {Pérez Valero, Eduardo and Maldonado Correa, David and Acal González, Christian José and Ruiz Castro, Juan Eloy and Alonso Morales, Francisco J. and Aguilera Del Pino, Ana María and Jiménez Molinos, Francisco and Wenger, Christian and Roldán Aranda, Juan Bautista},
}