Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems
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AuthorPérez-Bosch Quesada, Emilio; Romero Zaliz, Rocio Celeste; Jiménez Molinos, Francisco; Roldán Aranda, Juan Bautista
RRAM1T-1RMultilevelCompact modelingVerilog-AArtificial neural network
Pérez-Bosch Quesada, E.; Romero-Zaliz, R.; Perez, E.; Kalishettyhalli Mahadevaiah, M.; Reuben, J.; Schubert, M.A., Jimenez-Molinos, F., Roldan, J.B.; Wenger, C. Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems. Electronics 2021, 10, 645. [https://doi.org/10.3390/electronics10060645]
SponsorshipGerman Research Foundation (DFG) SFB1461; Federal Ministry of Education & Research (BMBF) 16ES1002 16FMD01K 16FMD02 16FMD03; Spanish Ministry of Science, Innovation and Universities; European Commission TEC2017-84321-C4-3-R; government of Andalusia (Spain) A.TIC.117.UGR18; Leibniz Association
In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.