Resistive memories simulation based on the kinetic Monte Carlo algorithm

Abstract

The efforts in this doctoral thesis have been focused on the development of RRAM physical simulators able to reproduce the resistive switching operation that takes place within the devices. The simulators were designed for the two main types of RRAMs, Conductive Bridge RAMs (both for unipolar and bipolar) and for Valence Change Memories. The work includes five publications in scientific journals indexed in the Journal Citation Report of Science Citation Index, one Proceedings published in IEEE Xplore digital library, four contributions to International Conferences. I have also contributed to other publications, where a book chapter is included, three videos detailing the operation of each simulator.