Resistive memories simulation based on the kinetic Monte Carlo algorithm
Metadatos
Afficher la notice complèteAuteur
Aldana Delgado, SamuelEditorial
Universidad de Granada
Departamento
Universidad de Granada.; Universidad de Granada. Programa de Doctorado en Tecnologías de la Información y la ComunicaciónMateria
Algoritmos Monte Carlo program Kinetics Simulation Memories
Date
2020Fecha lectura
2020-10-30Referencia bibliográfica
Aldana Delgado, Samuel. Resistive memories simulation based on the kinetic Monte Carlo algorithm. Granada: Universidad de Granada, 2020. [http://hdl.handle.net/10481/64065]
Patrocinador
Tesis Univ. Granada.; Ministerio de Economía y Competitividad de España, con fondos de la Unión Europea del programa FEDER a través de los proyectos TEC2014-52152-C3-2- R y TEC2017-84321-C4-3-R.; Red española ICTS MICRONANOFABS, por la fabricación de algunos de los dispositivos empleados.Résumé
The efforts in this doctoral thesis have been focused on the development of RRAM physical
simulators able to reproduce the resistive switching operation that takes place within the devices.
The simulators were designed for the two main types of RRAMs, Conductive Bridge RAMs (both
for unipolar and bipolar) and for Valence Change Memories. The work includes five publications
in scientific journals indexed in the Journal Citation Report of Science Citation Index, one
Proceedings published in IEEE Xplore digital library, four contributions to International
Conferences. I have also contributed to other publications, where a book chapter is included, three
videos detailing the operation of each simulator.