Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic
Metadatos
Afficher la notice complèteEditorial
Institute of Electrical and Electronics Engineers (IEEE)
Materia
Barriers Dual doping Fast logic Low-bias Polarity Reconfigurable Reprogrammable RFET Schottky
Date
2020Referencia bibliográfica
Navarro, C., Marquez, C., Navarro, S., & Gamiz, F. (2020). Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic. IEEE Access, 8, 132376-132381. [DOI: 10.1109/ACCESS.2020.3009967]
Résumé
Schottky junction reconfigurable FETs suffer from limited output currents to drive the
following stages, jeopardizing their viability for high-end applications. This drawback becomes dramatic
at low voltages. In this work, an analogous novel low-bias reprogrammable device is presented. It features
a dual PN doping at source and drain which improves the driving current density thanks to the presence of
both electron and hole reservoirs within the same structure. 3D-TCAD results for this innovative device on
advanced Silicon-on-Insulator technology are presented and compared with traditional reconfigurable FETs
and CMOS structures.