@misc{10481/63592,
year = {2020},
url = {http://hdl.handle.net/10481/63592},
abstract = {Schottky junction reconfigurable FETs suffer from limited output currents to drive the
following stages, jeopardizing their viability for high-end applications. This drawback becomes dramatic
at low voltages. In this work, an analogous novel low-bias reprogrammable device is presented. It features
a dual PN doping at source and drain which improves the driving current density thanks to the presence of
both electron and hole reservoirs within the same structure. 3D-TCAD results for this innovative device on
advanced Silicon-on-Insulator technology are presented and compared with traditional reconfigurable FETs
and CMOS structures.},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
keywords = {Barriers},
keywords = {Dual doping},
keywords = {Fast logic},
keywords = {Low-bias},
keywords = {Polarity},
keywords = {Reconfigurable},
keywords = {Reprogrammable},
keywords = {RFET},
keywords = {Schottky},
title = {Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic},
doi = {10.1109/ACCESS.2020.3009967},
author = {Navarro Moral, Carlos and Marquez, Carlos and Navarro, Santiago and Gámiz Pérez, Francisco Jesús},
}