Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic Navarro Moral, Carlos Marquez, Carlos Navarro, Santiago Gámiz Pérez, Francisco Jesús Barriers Dual doping Fast logic Low-bias Polarity Reconfigurable Reprogrammable RFET Schottky Schottky junction reconfigurable FETs suffer from limited output currents to drive the following stages, jeopardizing their viability for high-end applications. This drawback becomes dramatic at low voltages. In this work, an analogous novel low-bias reprogrammable device is presented. It features a dual PN doping at source and drain which improves the driving current density thanks to the presence of both electron and hole reservoirs within the same structure. 3D-TCAD results for this innovative device on advanced Silicon-on-Insulator technology are presented and compared with traditional reconfigurable FETs and CMOS structures. 2020-09-28T10:27:38Z 2020-09-28T10:27:38Z 2020 journal article Navarro, C., Marquez, C., Navarro, S., & Gamiz, F. (2020). Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic. IEEE Access, 8, 132376-132381. [DOI: 10.1109/ACCESS.2020.3009967] http://hdl.handle.net/10481/63592 10.1109/ACCESS.2020.3009967 eng http://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España Institute of Electrical and Electronics Engineers (IEEE)