Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power

Navarro, Carlos; Marquez, Carlos; Navarro, Santiago; Lozano, Carmen; Kwon, Sehyun; Kim, Yong Tae; Gámiz Pérez, Francisco Jesús

doi:10.1109/ACCESS.2019.2907151

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Identificadores

URI: http://hdl.handle.net/10481/59794

DOI: 10.1109/ACCESS.2019.2907151

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Editorial

IEEE

Materia

Capacitor-less

Single supply

Low-power

Germanium

Fecha

2019-03-25

Referencia bibliográfica

Navarro, C., Marquez, C., Navarro, S., Lozano, C., Kwon, S., Kim, Y. T., & Gamiz, F. (2019). Simulation Perspectives of Sub-1V Single-Supply Z 2-FET 1T-DRAM Cells for Low-Power. IEEE Access, 7, 40279-40284.

Patrocinador

This work was supported in part by the H2020 REMINDER European under Grant 687931, and in part by the Spanish under Project TEC2017-89800-R and Project IJCI-2016-27711.

Resumen

With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z2-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells.

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