Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power Navarro, Carlos Marquez, Carlos Navarro, Santiago Lozano, Carmen Kwon, Sehyun Kim, Yong Tae Gámiz Pérez, Francisco Jesús Capacitor-less Single supply Low-power Germanium With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z2-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells. 2020-02-20T12:57:04Z 2020-02-20T12:57:04Z 2019-03-25 journal article Navarro, C., Marquez, C., Navarro, S., Lozano, C., Kwon, S., Kim, Y. T., & Gamiz, F. (2019). Simulation Perspectives of Sub-1V Single-Supply Z 2-FET 1T-DRAM Cells for Low-Power. IEEE Access, 7, 40279-40284. http://hdl.handle.net/10481/59794 10.1109/ACCESS.2019.2907151 eng info:eu-repo/grantAgreement/EC/FP7/687931 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ open access Atribución-NoComercial-SinDerivadas 3.0 España IEEE