@misc{10481/59794,
year = {2019},
month = {3},
url = {http://hdl.handle.net/10481/59794},
abstract = {With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these
days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost
importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z2-FET (zero
subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical
simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected
to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe
cells with up to 75% energy reduction with respect to identical Si cells.},
organization = {This work was supported in part by the H2020 REMINDER European under Grant 687931, and in part by the Spanish under Project
TEC2017-89800-R and Project IJCI-2016-27711.},
publisher = {IEEE},
keywords = {Capacitor-less},
keywords = {Single supply},
keywords = {Low-power},
keywords = {Germanium},
title = {Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power},
doi = {10.1109/ACCESS.2019.2907151},
author = {Navarro, Carlos and Marquez, Carlos and Navarro, Santiago and Lozano, Carmen and Kwon, Sehyun and Kim, Yong Tae and Gámiz Pérez, Francisco Jesús},
}