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On the Low-Frequency Noise Characterization of Z2-FET Devices
dc.contributor.author | Marquez, Carlos | |
dc.contributor.author | Navarro, Carlos | |
dc.contributor.author | Navarro, Santiago | |
dc.contributor.author | Padilla De la Torre, José Luis | |
dc.contributor.author | Donetti, Luca | |
dc.contributor.author | Sampedro Matarín, Carlos | |
dc.contributor.author | Galy, Philippe | |
dc.contributor.author | Kim, Yong Tae | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2020-02-10T08:34:16Z | |
dc.date.available | 2020-02-10T08:34:16Z | |
dc.date.issued | 2019-03-22 | |
dc.identifier.citation | Marquez, C., Navarro, C., Navarro, S., Padilla, J. L., Donetti, L., Sampedro, C., ... & Gamiz, F. (2019). On the Low-Frequency Noise Characterization of Z 2-FET Devices. IEEE Access, 7, 42551-42556. | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/59522 | |
dc.description.abstract | This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-DRAM memory cells, although other applications, as for example electro static discharge (ESD) protection, have been reported. The experimentally extracted power spectral density of current reveals that the high-diode series resistance, carrier number fluctuations due to oxide traps, and gate leakage current are the main noise contributors at high-current regimes. These mechanisms are expected to contribute to the degradation of cell variability and retention time. Higher flicker noise levels have been reported when increasing the vertical electric field. A simple model considering the contribution of the main noise sources is proposed. | es_ES |
dc.description.sponsorship | This work was supported in part by the European REMINDER 687931 Grant, in part by the Consejeria de Economia, Conocimiento, Empresas y Universidad de la Junta de Andalucia and European Regional Development Fund (ERDF), under Grant SOMM17/6109/ UGR, and in part by the TEC2017-89800-R Projects | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | Noise measurement | es_ES |
dc.subject | Semiconductor device reliability | es_ES |
dc.subject | Silicon on insulator technology | es_ES |
dc.title | On the Low-Frequency Noise Characterization of Z2-FET Devices | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1109/ACCESS.2019.2907062 |