Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach
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AuthorRodríguez Santiago, Noel; Maldonado, D.; Romero Maldonado, Francisco Javier; Alonso Morales, Francisco J.; Aguilera Del Pino, Ana María; Godoy Medina, Andrés; Jiménez Molinos, Francisco; García Ruiz, Francisco Javier; Roldán Aranda, Juan Bautista
MemristorRRAMVariabilityTime series modelingAutocovarianceGraphene oxideLasers
Rodriguez, N., Maldonado, D., Romero, F. J., Alonso, F. J., Aguilera, A. M., Godoy, A., ... & Roldan, J. B. (2019). Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach. Materials, 12(22), 3734.
SponsorshipThe authors thank the support of the Spanish Ministry of Science, Innovation and Universities under projects TEC2017-89955-P, TEC2017-84321-C4-3-R, MTM2017-88708-P and project PGC2018-098860-B-I00 (MCIU/AEI/FEDER, UE), and the predoctoral grant FPU16/01451.
This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model. The application of both numerical procedures points to the existence of a filament connecting the electrodes that may be interrupted at a precise point within the conductive path, resulting in resistive switching phenomena. These results support the existing model attributing the memristance of laser-fabricated graphene oxide memristors to the modification of a conductive path stoichiometry inside the graphene oxide.