Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach Rodríguez Santiago, Noel Maldonado, D. Romero Maldonado, Francisco Javier Alonso Morales, Francisco J. Aguilera Del Pino, Ana María Godoy Medina, Andrés Jiménez Molinos, Francisco García Ruiz, Francisco Javier Roldán Aranda, Juan Bautista Memristor RRAM Variability Time series modeling Autocovariance Graphene oxide Lasers This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model. The application of both numerical procedures points to the existence of a filament connecting the electrodes that may be interrupted at a precise point within the conductive path, resulting in resistive switching phenomena. These results support the existing model attributing the memristance of laser-fabricated graphene oxide memristors to the modification of a conductive path stoichiometry inside the graphene oxide. 2020-01-09T13:46:47Z 2020-01-09T13:46:47Z 2019-11-13 journal article Rodriguez, N., Maldonado, D., Romero, F. J., Alonso, F. J., Aguilera, A. M., Godoy, A., ... & Roldan, J. B. (2019). Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach. Materials, 12(22), 3734. http://hdl.handle.net/10481/58590 10.3390/ma12223734 eng http://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España MDPI